Transient avalanche oscillation of IGBTs under high current

Radio frequency oscillations up to several hundreds of MHz were observed during turn-off the high-current conducting IGBTs. They are described in this work as Transient Avalanche oscillations. Other than PETT oscillations that happen in the tail current phase, this oscillation appears during the rise of collector-emitter voltage VCE and during the fall of the collectoremitter current ICE. The turn-off process of IGBTs are investigated with the help of measurements, the circuit- and device-simulations to reveal the working mechanisms of transient high-frequency oscillations. For the first time the Transient Avalanche Oscillation is successfully reproduced with computer simulation, which allows the further investigation on the influences of individual parameters. The participation of IMPATT mechanism in Transient Avalanche oscillation is demonstrated. The interaction between IMPATT mechanism und PETT mechanism during the setting up of depletion region in IGBTs was investigated. Measures to suppress such oscillation are discussed on the levels of chip design, module design and the driver concept. Supplying electron current during critical phase is found to be an effctive method to avoid the dynamic avalanche and the TA-oscillation.