Multi-run Memory Tests for Pattern Sensitive Faults

Autor*innen

• Ireneusz Mrozek

Parameter

• 148 Seiten
• 6 Lesestunden

• Architektur & Städtebau
• Informatik & Programmierung
• Technik & Maschinenbau

Mehr zum Buch

The book focuses on advanced techniques for both production and periodic maintenance testing of semiconductor memory, particularly addressing multi-cell faults. It explores background selection and address reordering algorithms within multi-run transparent march testing processes. The author presents formal methods for generating multi-run tests, emphasizing solutions to enhance efficiency. Each method is thoroughly validated through analytical investigations and numerical simulations, ensuring a comprehensive understanding of the testing processes in modern semiconductor technology.

• Sprache: Englisch
• Erscheinungsdatum: 2019
• Einband: Paperback