Model Parameter Extraction for Very Advanced Heterojunction Bipolar Transistors

Autor*innen

• Julia Krause

Parameter

• 196 Seiten
• 7 Lesestunden

• Elektrotechnik

Mehr zum Buch

The book delves into the critical role of semiconductor device modeling in meeting the stringent performance demands of high-performance applications. It emphasizes the complexity and cost of modern devices, highlighting the need for sophisticated compact models that accurately reflect the physical effects in advanced Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs). Additionally, it discusses the importance of model parameters in ensuring the practical applicability of these models in the industry.

• Sprache: Englisch
• Erscheinungsdatum: 2016
• Einband: Paperback