Advanced Physical Models for Silicon Device Simulation

Focusing on the critical review of silicon device simulators, the introductory chapter evaluates physical models based on the Boltzmann equation, highlighting their accuracy and application results. Despite the advancements over three decades, challenges remain in understanding microscopic processes and achieving model uniqueness. Subsequent chapters derive physics-based models from a microscopic perspective, employing innovative "tailored quantum-mechanics" approaches. The text emphasizes the trade-offs between computational efficiency and physical accuracy, illustrating the complexities involved in model development for device simulation.